Laser Micromachining for Gallium Nitride Based Light-Emitting Diodes

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output p...

Breakthroughs in Improving Crystal Quality of GaN and Invention of the p--n Junction Blue-Light-Emitting Diode

Marked improvements in the crystalline quality of GaN enabled the production of GaN-based p−n junction blue-light-emitting and violet-laser diodes. These robust, energetically efficient devices have opened up a new frontier in optoelectronics. A new arena of wide-bandgap semiconductors has been developed due to marked improvements in the crystalline quality of nitrides. In this article, we revi...

Degradation mechanism beyond device self-heating in high power light-emitting diodes

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On the triplet distribution and its effect on an improved phosphorescent organic light-emitting diode

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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes